Double-injection leakage currents in Channeled Substrate Buried Heterostructure semiconductor lasers with semi-insulating InP:Fe current blocking layers.
27 October 1987
Current leakage in Channeled Substrate Buried Heterostructure (CSBH) lasers with semi-insulating InP:Fe layers grown by metallo- organic chemical vapor deposition (MOCVD) reduces the power output of these devices as well as the operating temperature range. Although dopant-diffusion and electrical type-conversion of the MOCVD current blocking layers has been previously identified as a possible cause of leakage, the leakage persists even after the type-conversion problem has been fixed. An extensive study of CSBH/MOCVD lasers with both p-type and n-type substrates has been carried out by means of scanning electron microscope (SEM) examination of stained laser facets, electron beam induced current (EBIC), electroluminescence (EL) imaging, and recording of light and voltage versus current (LIV) data.