Dry etch resistance enhancement of PBS by plasma exposure.
01 January 1986
A reproducible process to enhance the dry etch resistance of pol(butene-1 sulfone) (PBS) in fluorine-base plasmas has been developed. The process consists of the exposure of PBS to an oxygen plasma followed by a brief CF(4)/O(2) plasma exposure. The resulting resist film shows dramatically improved dry etch resistance in subsequent plasma etch and reactive ion etch pattern transfer processes.