Easily processable phenylene-thiophene-based organic field-effect transistors and solution-fabricated nonvolatile transistor memory elements

The synthesis of a new series of mixed phenylene-thiophene oligomers is reported; 2,5-bis(4-n-hexylphenyl)thiophene (dH-PTP, 1), 5,5'-bis(4-n-hexylphenyl)-2,2'-bithiophene (dH-PTTP, 2), 5,5{''}-bis(4-n-hexylphenyl)-2,2':5',2{''}-terthiophene (dH-PT3P, 3), 5,5{''}'-bis(4-n-hexylphenyl)-2,2':5',2{''}:5{''},2{''}'-quaterthiophene (dH-PT4P, 4), 1,4-bis{[}5-(4-n-hexylphenyl)-2-thienyl]benzene (dH-PTPTP, 5), and 2,5-bis{[}4(4'-n-hexylphenyl)phenyl]thiophene (dH-PPTPP, 6) were characterized by H-1 NMR, elemental analysis, UV-visible spectroscopy, differential scanning calorimetry, and thermogravimetric analysis. 

Vacuum-evaporated and solution-cast films were characterized by X-ray diffraction and scanning electron microscopy. All compounds display high p-type carrier mobilities as evaporated (up to 0.09 cm(2)/Vs) and as solution-cast (up to 0.03 cm(2)/VS) films on both Si/SiO2 and ITO/GR (glass resin) substrates. The straightforwardly synthesized dH-PTTP (2) displays an unprecedented combination of mobility, on/off ratio, stability, and processability. Both dH-PTTP (2) and dH-PPTPP (6) display a reversible, tunable, and stable memory effect even as solution-cast devices, with turn-on characteristics shifting from accumulation mode to zero or depletion mode after a writing voltage V. is applied. 

The charge storage is distributed over the gate dielectric structure and is concentrated near the dielectric-semiconductor interface, as evidenced by the response of ``floating gate{''} configuration devices. Simple nonvolatile elements have been fabricated by solution-only techniques on ITO substrates using spin-coated glass resin, solution-cast oligomeric semiconductors, and painted graphite paste electrodes.