Effects of ion bombardment on transport properties of thin films of CoSi2 and NiSi2.

Measurements of electrical transport properties have been made on thin films of the transition metal disilicides, CoSi2 and NiSi2. Ion bombardment substantially increases the resistivity of these metallic systems, an effect virtually absent in ordinary metals. Matthiessen's rule is obeyed over a remarkably wide bombardment range. An anomalously large resistivity seen in undamaged NiSi2 is explained in terms of an intrinsic defect. Channeling effects in the damage-resistivity behavior of textured CoSi2 films can be understood in terms of effective-medium theory for a two-dimensional random- resistor network.