Electrical and Structural Characterization of Ultrathin CoSi sub 2 FIlms on Si (111)

There is increasing interest in the growth and characterization of heteroepitaxial structures involving not only semiconductors but also metals and insulators. Various properties of the interfaces of such heterostructures are of crucial importance both for successful epitaxial growth and for applications. A number of recent developments promise to shed light the evolution of a metal-semiconductor interface, CoSi sub 2/Si and on the structure of an insulator-semiconductor interface, CaF sub 2/Si.