Electrical behavior of SiN.
01 January 1986
The electrical properties of plasma deposited silicon nitride films deposited at different rf powers were determined. The hydrogen content of these films was determined using FT-IR. The conductivity of the films was found to depend upon the hydrogen content [H] and was given by sigma = 3.34x10 sup - 25 exp (29.56 x 10 sup 22 [H]) at 70C and 4x10 sup 6 V/cm. The high temperature Frenkel-Poole barrier height was also strongly dependent on the hydrogen content. A model is proposed which qualitatively explains the electrical behavior of the films.