Electrical Transport in Si/CoSi sub 2 /Si heterostructures Grown by Mesotaxy

We have used mesotaxy, a technique which involves high dose implantation followed by high temperature annealing, to create thin (500angstroms) layers of oriented single-crystal CoSi sub 2 buried beneath the surface of (100) silicon wafers. Several thousand angstroms of epitaxial silicon are then deposited using an RTCVD process. This results in a Si/CoSi sub 2 heterostructure which is difficult to grow by UHV deposition and reaction. Rutherford backscattering and channeling measurements in conjunction with TEM observation indicate that the Si overlayer has threading dislocations at a density of ~10 sup 8 / cm sup 2. In addition, some SiC precipitates appear at the original Si surface.