Electron Impact Ionization Cross Section Measurements of the Ga and In Atoms

Absolute electron impact cross sections for single and double ionization of Ga and In have been measured from threshold to 200 eV, with an accuracy of +-15%. Beam of Ga and In ions are formed from a dc discharge in neon with solid GaP or InP present. The ions are accelerated to 3 keV and neutralized by charge transfer with triethylamine or xenon.