Skip to main content

Electronic transport and depletion of quantum wells by tunneling through deep levels in semiconductor superlattices.

01 January 1986

New Image

We have observed a series of very narrow peaks in the low temperature photocurrent-voltage characteristic of multiquantum well p- i-n junctions grown by molecular beam epitaxy. In addition, the forward dark current and capacitance exhibit a step-like decrease at the same voltages of the photocurrent peaks. These features provide the first direct evidence of electronic transport as well as of depletion of quantum wells by tunneling through deep levels in the barrier layers in semiconductor superlattices.