Enhancement of lateral solid phase epitaxial growth of Si on SiO sub 2 with sup (31) P implantation.

The lateral solid phase epitaxial growth of amorphous Si on SiO sub 2 patterns with sup (31) P implantation is studied. By implanting sup (31) P into only the surface region of the sample to form a doped channel, the Si growth rate is enhanced and the random crystallization of Si is suppressed. The maximum length of lateral solid phase epitaxial Si obtained from samples with the doped channel (~9microns) is a factor of 3 more than that of the undoped sample. This Si on SiO sub 2 film should have a low dopant concentration after the highly doped channel is removed and will be useful for device applications. Details of the sup (31) P implantation conditions with the enhancement mechanisms in lateral solid phase epitaxy are discussed.