Epitaxial growth of n sup + -n GaAs metal-semiconductor field effect transistor structures using tertiarybutylarsine.

01 January 1990

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We report the first demonstration of metal-semiconductor field effect transistors (MESFETs) made from GaAs structures grown with an alkylarsine source, tertiarybutylarsine (t-BuAsH sub 2). MESFET fabrication was performed in parallel on BAsH sub 2 and arsine-grown wafers to enable direct comparison of device characteristics. The GaAs n sup + -n MESFETs made with BAsH sub 2 exhibited excellent saturation and pinch-off characteristics, and diode performance comparable to arsine devices. Although the peak transconductance g sub m was lower than that achieved with the arsine sample, the form of the g sub m vs gate voltage curves for the t-BuAsH sub 2 devices were characteristic of well-behaved GaAs MESFETs. These initial results demonstrate the capability of t-BuAsH sub 2 for growing electronic device structures having good carrier transport properties and effective isolation layers.