Excitonic Saturation Intensity in GaAs/AlGaAs Quantum Well Optical Modulators
15 October 1989
Exciton saturation adversely limits the switching speed of GaAs/Al sub x Ga sub (1-x) As quantum well electroabsorptive optical modulators. We have studied the dependence of the exciton saturation intensity I sub (IX) on the strength of the applied field and the height and width of the AlGaAs barriers. Five pin photodiodes were grown by molecular beam epitaxy with quantum wells comprising the intrinsic region.