High Dielectric Constant Hf-Ti-Sn-0 Thin Films

New Hf-Sn-Ti-O thin-film high dielectric constant materials were identified using a compositional-spread approach. Thin films of composition Hf sub (0.2) Sn sub (0.05) Ti sub (0.75) O sub 2 prepared at 250C have excellent dielectric properties: 40-50 nm thick films with a dielectric constant of 40-60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9-17 fF/micron sup 2. Breakdown fields were measured to be about 3-4 MV/cm, yielding a Figure of Merit epsilon epsilon sub 0 E sub (br) ~ 19 mu C/cm sup 2. Leakage currents, measured at 1 MV/cm, were in the range 10 sup (17) -10 sup (-6) A/cm sup 2.