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High performance InP/InGaAs strained quantum well interband photodiodes for nir resonant photodetection

01 January 2008

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We report experimental characterization results for Near Infrared planar photodiodes with a potential cut-off wavelength higher than 1900 nm. The active layer is made up of three compressively strained InGaAs quantum wells. This photodiode is to be finally integrated in a MOEMS tunable resonant cavity for the realization of a low cost microspectrometer intended to agro-food applications.