High power AlGaN/GaN HEMTs grown by plasma-assisted MBE operating at 2 to 25 GHz
23 June 2003
In this paper, AlGaN/GaN heterostructures grown by plasma-assisted MBE on semi-insulating 6H-SiC. Optimization of MBE growth conditions now allows for the routine production of heterostructures with a room temperature mobility of 1400cm2/Vs at a sheet density of 1.1×1013cm-2. We discuss heterostructure designs found to minimize RF dispersion. All power data reported is achieved without the use of a SiN surface passivation layer.