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High-resolution X-Ray Diffraction and Transmission Electron Microscopy studies of InGaAs/InP superlattices grown by gas- source molecular beam epitaxy.

01 January 1986

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A three-crystal geometry has been used for high-resolution X-Ray Diffraction (XRD) along with lattice imaging Transmission Electron Microscopy (TEM) to study two high-quality InGaAs/InP multi-quantum well structures grown on (100) InP. These superlattices were prepared by gas source molecular beam epitaxy using a computer controlled system and were found to have excellent optical properties. Cross-section TEM and the presence of sharp satellite reflections in the XRD profiles demonstrate very smooth interfaces with well-defined modulated structures which could be derived from a kinematic XRD step model. For one of these superlattices, excellent agreement between the step model and the measurements is obtained when the model assumes that each period consists only of the well and the barrier with ideally sharp interfaces.