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High Sensitivity Electronic Raman Spectroscopy for Acceptor Determination In GaAs

01 January 1989

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A new method for acceptor determination by electronic Raman in bulk semi-insulating GaAs is reported. Separate laser wavelengths for photo-neutralization of acceptors and probing neutral acceptor populations is employed. Sensitivity is improved by 10 sup 4 over previous methods. The added sensitivity permits more complete understanding of charge balance, allows spatial mapping, and illuminates the variation of shallow donor concentration.