High Speed InP/Ga sub (0.47) In sub (0.53)As Superlattice Avalanche Photodiodes with Very Low Background Doping Grown by Continuous Trichloride Vapor Phase Epitaxy
01 January 1986
Trichloride vapor phase epitaxy (VPE) has been employed in a single chamber reactor to achieve the continuous (non-interrupted) growth of n-InP/n-In sub (0.52) Ga sub (0.47)As/InP superlattice structures for avalanche photodetector (APD) applications.