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Impurities in SiF(4) determined by infrared spectroscopy and Fourier transform mass spectrometry.

01 January 1985

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Silicon tetrafluoride, SiF(4), of high purity with respect to either hydrogen- or oxygen-containing species is required by the optical waveguide telecommunications and photovoltaic industries, respectively. Fourier Transform mass spectrometric and gas-phase infrared spectroscopic methods were developed to identify and quantify these detrimental impurities. Analyses fo samples for several source showed the principal oxygen-containing and hydrogen-containing impurities to be: hexafluorodisiloxane, Si(2)F(6)0 (0.3 to 3 mole %) and trifluorosilane, SiF(3)H, (0.2 to 0.8 mole %).