Increase in Photoluminescence of Zn-Doped p-Type InP after Hydrogenation
01 January 1989
We report on the effect of hydrogenation on the low temperature (5.5K) photoluminescence properties of Zn doped p-type (p-3x10 sup (18) cm sup (-3)) InP substrates. The photoluminescence spectrum of the as-grown sample shows a Zn sub (IN) acceptor related transition near the band edge at 1.386 eV and a Zn related PL band at 1,214 eV and a phosphorus vacancy V sub P related Pl band at 1.01 eV.