InGaAs/InP Multiple Quantum Well Waveguide Phase Modulator.
01 January 1987
A double heterostructure ridge waveguide with multiple quantum well InGaAs/InP core and InP cladding layers has been operated as a phase modulator at 1.52micron wavelength. The observed phase shift coefficient was 12 degree/volt-mm. With a 1 mm long device we have achieved a half wavelength shift at 15 volts bias and a maximum phase shift of 420 degrees at 35 volts. Quantum confined Stark effect electroabsorption has been observed in the shorter 1.49-1.52micron wavelength region. The ability to obtain lambda/2 modulation with a short device and relatively low voltage makes this device very attractive for practical applications.