InGaAs/InP Photodiodes grown by metalorganic chemical vapor deposition.
01 January 1986
InGaAs/InP heterostructure p-i-n photodiodes and two types of InGaAs/InP avalanche photodetectors have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapor deposition. The p-i-n photodetectors are diffused p-n junction devices of 75micron diameter and have low dark currents (~10 nA at -10V), good quantum efficiencies (~50% without AR coatings), and response times less than 40ps. The avalanche photodiodes with separate absorption and multiplication regions (SAM APD's) have shown the two-component pulse response that is typical of this type of structure with the fast component being 100ps and the slow component being 6ns.