InGaP Clad InP Waveguides.

We have made InGaP clad InP waveguides on InP substrates by atmospheric pressure Metal Organic Vapor Phase Epitaxy (MOVPE). The introduction of Ga in the cladding layers causes a large relative index change (DELTA n = 0 to >0.3) that can be varied with the Ga concentration (0.3 with Ga at 5 x 10 sup (19) cm sup (-3)), creating strong, low loss (~1.25 dB/cm) waveguides. In addition some of these structures were doped with Fe, using ferrocene as the Fe doping source. Typical resistivities of 10 sup 7 ohm-cm have been achieved at Fe concentrations of 5x10 sup 17 cm sup (-3), allowing electric fields in excess of 10,000 v/cm to be applied to the waveguides. InGaP/InP Fe- doped waveguides should prove extremely useful in fabricating switches, modulators, couplers and filters for integrated optics devices.