Lateral photoeffect in thin amorphous superlattice films of Si and Ti grown on a Si substrate.
01 January 1986
The lateral photoeffect in a new type of amorphous superlattice film, consisting of 6Angstroms of Ti and 13Angstroms of Si grown on a Si substrate is discussed. The photovoltage varies extremely linearly with light spot position and can thus be used in accurate position sensitive detectors.