Mechanism of Selective Area Growth of Aluminum by Organometallic Chemical Vapor Deposition

The pyrolysis of triisobutylaluminum occurs much more readily on the surface of Al than on the surface of an oxide. This propensity allows Al to be grown selectively on a wafer and may simplify certain metallization steps in integrated circuit manufacture. For example, the filling of high-aspect ratio via holes for applications in multilevel metallization might be performed using such an Al deposition technique.