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Molecular Beam Epitaxial Growth of II-V Semiconductor Zn sub 3 As sub 2 and II-IV-V Chalcopyrite Zn Ge As sub 2

01 January 1987

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The first molecular beam epitaxial growth of the II-V semiconducting compound Zn sub 3 As sub 2 and mixed crystals of chalcopyrite ZnGeAs sub 2 and Ge is reported. Zn sub 2 As sub can be grown on InP or GaAs at 300 degrees through 360C. A small mismatch with InP leads to commensurate single domain growth of the tetragonal Zn sub 3 As sub 2. At room temperature, the unintentionally doped Zn sub 3 As sub 2 has a hole concentration of 5 x 1018cm sup -3, a hole mobility of 43 cm sup 2/V-sec, and an absorption edge at 0.99 eV. Low temperature data suggest that the lowest acceptor level is very close in energy to the valence band maxima located at k not equal to 0, while the k equal to 0 energy of the uppermost valence band is slightly lower.