Near Infrared Vibrational and Electronic Raman Spectroscopy with an Array Detector

The advent of low noise Si CCD cameras has extended the spectral coverage of array detectors into the near infrared. The two most widely used compound semiconductors (GaAs and InP) band edges are now within reach of these exceptional performance devices. In addition the simultaneous arrival of high power diode lasers in this same spectral region presents the opportunity for compact, sensitive, spontaneous Raman instrumentation with both superior performance and reduced fluorescence interference. The application of Si CCD detectors for quantitative determination of acceptor impurities in bulk GaAs will be presented.