Nonequilibrium Electron Dynamics in Small Semiconductor Structure

Reducing length scales in n-p-n heterojunction bipolar transistors leads to changes in both the mode of operation and the fundamental limits ro device performance. For example, extreme nonequilibrium electron motion dominates base transport when device base thickness is similar to the characteristic mean free path of charge carriers. In addition, changes in scattering phase space can result in reduced inelastic electron rates at very high p-type carrier concentration. ,