Observation of 2D Ordering in Ion damaged graphite during post implantation annealing.

Post implantation annealing of ion-damaged, highly oriented pyrolytic graphite (HOPG) has been studied by Raman spectroscopy, ion channeling technique and Transmission Electron Microscopy. Complementary information obtained by these methods provides confirmation for the first step of graphitization of ion-damaged graphite at temperatures above 2300C. This is manifested by formation of carbon planes with two dimensional ordering but no correlation in the third (c-axis) dimension.