Phosphorus Ion Implantation Induced Intermixing of InGaAs - InP Quantum Well Structures.
01 January 1989
We haved studied P ion implantation induced intermixing of In sub 0.53Ga sub 0.47As quantum wells embedded between InP barriers. Both standard furnace anneals at 650C and rapid thermal anneals at 750C were performed. Low temperature photoluminescence and quantitative Auger electron spectroscopy were performed for furnace annealed samples. Photoluminescence shifts of ~200 meV are in excellent agreement with the calculated bandgap for the lattice matched composition determined by Auger spectroscopy. Rapid thermal annealed samples yield an energy gap shift of ~150 meV for anneling times of at least 10 seconds.