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Picosecond Response of InGaAsP/InP Quantum Well Lasers with and Integral Electroabsorptive Loss Modulator

15 October 1989

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SUMMARY: We report the first results of the high speed response of InGaAs/InP single- and multiple quantum well laser diodes (lambda = 1.5microns) which incorporate a small intracavity modulator section (Fig. 1). This structure has the advantage that small changes in electrical power (30 muW) result in large changes in optical output power (7 mW). It does not suffer from the problems associated with an external cavity and can be driven directly by low power digital signals - both desirable characteristics for future opto-electronic devices.