Picosecond Surface Electron Dynamics on Photoexcited Si(111)2x1 Surfaces.
01 January 1986
Surface electrons were selectively photoexcited into the normally unoccupied antibonding surface state on the cleaved Si(111)2x1 surface using 2.8microns infrared laser radiation. The time decay of the antibonding state population was then followed in real time using picosecond time-resolved UV photoemission spectroscopy. The relaxation dynamics were found to be cleavage dependent, and appear to be controlled by defects, which give rise to a unique signature in the photoemission spectra.