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Planar InP/InGaAsP Avalanche Photodiode Fabricated with a Novel Photoelectrochemical Etching Technology

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A high speed planar InP/InGaAsP avalanche photodiode (APD) with a reduced junction curvature and low p-type doping was fabricated by Be sup + implantation through a photoelectrochemically (PEC) etched InGaAs mask. This device has a planar structure yet no need for the n sup - -InP top layer and guard ring that are conventionally used for planar devices. The epitaxial structure with layers of InGaAs, InP, InGaAsP on InP substrate was grown in a multiple chamber hydride vapor phase epitaxial reactor.