Planar TEM Analysis of Nanoindented Samples Using the Docused Ion Beam Lift-Out Technique

Traditionally, selected area planar samples prepared for transmission electron microscopy (TEM) have employed a combination of mechanical grinding, wet/dry chemical etching and ion beam milling. This approach is both time consuming and difficult when site specificity is required. With the development of the focused ion beam lift-out technique the sample preparation time could be reduced to less than 2 hours with a high degree of site selectivity. The TEM cross section FIB lift-out (FIBXLO) has seen great success int he past several years for failure analysis in cases where the lateral location of the defect is known to within 125 nm. If the lateral position of an anomaly or defect is not known to a high degree of accuracy a planar sample preparation is preferred. The planar sample also provides a larger area for analysis which is beneficial in materials characterization or statistical analysis. This paper will outline the planar FIB lift-out (FIBPLO), a technique that has been shown to provide both site selectivity as well as the rapid results required by the microelectronics industry.