Quantitative SIMS analysis of contaminants in TaSi sub 2 thin films.

Secondary Ion Mass Spectrometry (SIMS) has been used to identify and quantify contaminants in TaSi sub 2 thin films. Quantification was established for 31 elements by the analysis of ion implants into TaSi sub 2 layers. The results are tabulated in terms of useful yield and relative sensitivity factor (RSF). The data follow the same useful yield versus ionization potential relationship noted for a Si matrix. Contamination in films deposited by co-sputtering from pure Ta and Si targets in a multi-wafer rotating hemisphere system (Varian 3120) was correlated to metallic machine components. Analysis of films from more than 75 targets used in a composite target single wafer system (Varian 3180) showed that the metallic contamination was caused by the presence of impurities within the target. The mobility of the detected elements was investigated by analyzing samples as deposited and after anneal.