Quantum and transport lifetimes in a tunable low density AlGaN/GaN two-dimensional electron gas

We experimentally determine the density dependence of the transport lifetime (tt) obtained from low field Hall measurements and the quantum lifetime (tq) derived from analysis of the amplitude of Shubnikov-de Haas oscillations in a tunable high mobility two-dimensional electron gas (2DEG) in a GaN/Al0.06Ga0.94N/GaN heterostructure. Using an insulated gate structure we are able to tune the 2DEG density from 2x1011cm-2 to 2x1012cm-2, and thus, monitor the evolution of the scattering times in a single sample at T=0.3K in a previously unexplored density regime. The transport lifetime tt is a strong function of electron density, increasing from ~2.7ps at ne=2x1011cm-2 to ~11ps at ne=1.75x1012cm-2. Conversely, we find that the quantum scattering time tq is relatively insensitive to changes in electron density over this range. The data suggests that dislocation scattering accounts for the density dependence of tq as well as tt in our low-density sample.