Raman scattering from Ge(x)Si(1-x)/Si strained-layer superlattices.

Raman spectroscopy has been used to determine built-in deformation in Ge(x)Si(1-x)/Si strained layer superlattices grown by molecular beam epitaxy. By comparing peak positions in commensurate superlattices and single layers with those from incommensurate thick layers of the same composition we can obtain quantitative determination of strain.