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Recent Advances in Materials and Process Technology for VLSI Circuits (NOT KNOWN IF PUBLISHED BECAUSE AUTHOR HAS LEFT AT&T)

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Fabrication of newer submicron device structures requires a greater control of doping profiles and physical topography. These trends have led to industry-wide advances in VLSI materials and processes that emphasize lower thermal budgets and planarization. Examples are: (a) self-aligned silicide diffusion sources for shallow junctions, (b) TEOS based chemistry for deposition of dielectrics with good step coverage and flow properties, and (c) CVD tungsten for contact plugs and via fills.