Reconstruction of (100) Silicon/Disilicide Interfaces.

A 2x1 reconstruction has been observed at the Si/NiSi2(100) and Si/CoSi2(100) interfaces. The reconstruction has been found in both ion-implanted (mesotaxial) material and in material grown by molecular beam epitaxy (MBE). The reconstruction is apparent in HREM images obtained from cross sections and in transmission electron diffraction (TED) patterns from (100) orientation samples. We propose that the reconstruction is due to a layer of dimerised silicon atoms at the interface. We conclude that the 2x1 reconstruction is an equilibrium state of the silicon/disilicide(100) interface.