Resonant Hole Tunneling Times in GaAs/AlGaAs Heterostructures

The tunneling of carriers in semiconductor heterostructures has recently gained much interest due to its importance as a basic physical phenomenon and its promising device applications. Transport and optical methods have given insight into the tunneling processes for electrons. Recently, a newly developed optical technique using ultrafast luminescence measurements in asymmetric double quantum wells allowed to directly determine the electron tunneling times.