Resonantly enhanced electron tunneling rates in quantum wells.
01 January 1989
Resonant tunneling of electrons in GaAs-AlGaAs quantum wells is resolved by picosecond pump-and-probe electroabsorption measurements. The temperature independent tunneling escape times are dramatically affected by the applied electric field, with a pronounced minimum at the field corresponding to the resonance between the n=1 electron level in one quantum well, and the n=2 electron level in the adjacent one. The calculated field dependence of the tunneling times is in qualitative agreement with the data.