Room-temperature 1.3 mu m emission from InAs quantum dots grown by metal organic chemical vapor deposition

Using metal organic chemical vapor deposition, we have fabricated self-organized quantum dots that emit efficiently at 1.3 mu m at room temperature. They are grown on GaAs and consist of InAs covered with an InGaAs cap layer. Their density is 2 x 10(10) cm(-2) as determined by transmission electron microscopy. Room-temperature photoluminescence shows a 36 meV broad line at 1.3 mu m, corresponding to the quantum-dot ground state, with excellent uniformity across the wafer. The efficiency of this emission is reduced only by a factor of 4 with respect to low temperature showing the high quality of the sample. (C) 1999 American Institute of Physics. {[}S0003-6951(99)01741-6].