Si/CoSi sub 2/Si structures: Pseudomorphism, interface structures, epitaxial orientations, and the control of pinholes.

The structures of thin CoSi sub 2 layers and double heterostructures on Si(111) are studied. Results obtained from low energy electron diffraction, Auger electron spectroscopy, planview and cross- sectional transmission electron microscopy, Rutherford back- scattering spectrometry with channeling and Nomarsky interference microscopy are presented. Discussion will focus on the following issues: (1) the formation mechanism of pinholes in thin CoSi sub 2 layers and the techniques to avoid pinholes; (2) the growth of either type A or type B Si layers on CoSi sub 2; (3) the roles played by strains in the epitaxial CoSi sub 2/Si(111) system; and (4) the atomic structures at various CoSi sub 2/Si interfaces.