Silicon Homoepitaxy by Rapid Thermal Chemical Vapor Deposition
28 November 1988
Rapid thermal chemical vapor deposition (RTCVD), a marriage between lamp heating and chemical vapor deposition technologies, shows great promise as a technique for depositing heterostructures requiring sharp interfaces and/or compositional gradations. In this talk, we will discuss the quality of homoepitaxial silicon films deposited by this technique.