Solid Phase Epitaxial Growth of Laser Quenched and Ion Implanted Silicon
The solid phase epitaxy growth (SPEG) kinetics of a-Si produced by laser amorphization and ion implantation have been compared to determine the differences between these metastable phases. Silicon-on-sapphire samples were either self-implanted with sup 28 Si or sup 29 Si to form 200 nm thick amorphous silicon layers or were laser amorphized in situ with single 100 psec tripled Nd:YAG (355 nm) pulses to form ~20 nm thick a a-Si layers.