Space-Charge Effects in Projection Electron-Beam Lithography: Results From the Scapel Proof-of-Lithography System

In projection electron-beam systems resolution and throughput are linked through electron-electron interactions collectively referred to as space-charge effects. Hence, a detailed understanding of these effects is essential to optimizing the lithographic performance of a projection electron- beam lithography system. Although many models have been developed to describe one or more of the various aspects of the Coulomb interactions that occur in the beam, there is minimal experimental data available. We have performed a series of experimental measurements in the SCAPEL Proof-of-Lithography (SPOL) system to characterize the space-charge effects for such an optical configuration. The results of those measurements have been compared to a combination of computer simulations and analytical models. The agreement between the models and experiments was good, within the limits of experimental error. We determined the exponent in the dependence of blur on beam current to be 1.029 +- 0.16 (1 sigma), consistent with more models. Additionally, we comment on the use of blur modeling for system optimization.