Structural damage produced in InP(100) surfaces by plasma-employing deposition techniques.

In this work, again using Rutherford backscattering under channeling conditions, we have investigated the interface between InP and a deposited dielectric or metal for various other types of plasma and sputter deposition. Dose and/or energy of species incident on the InP surface during the initial stage of deposition has been varied over the spectrum intermediate to the relative extremes of the two previously studied cases.