The effect of channeling on MeV ion-induced Auger electron production in silicon.
01 January 1985
We have measured Auger electron emission from single crystal targets of Si(111) bombarded with H(+) and (4)He(+) beams in the 0.5 to 1.8 MeV range under channeled and random directions of incidence. Under channeling conditions (monitored by simultaneous measurement of the Rutherford backscattering yield), a significant reduction is observed in the intensity and also in the energy width of the KLL Auger line.