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The Effect of Spin Fluctuations and Strain on the Optical Properties of Semimagnetic Semiconductors

08 June 1988

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Using linear response theory, we have derived the form of a spin fluctuation-induced e-h interaction in a semi-magnetic semiconductor, in terms of spin susceptibilities. We then use neutron scattering[1] results on the type III antiferromagnetic behavior and magnetization results[2] on the spin glass behavior of this system to explain recent luminescence[3] measurements on (Cd,Mn)Te, which suggested the existence of spin fluctuation localization of electrons and holes.