The electrical properties of DADBS Silicon Oxide.

Thin films (180 to 1060Angstroms) of silicon oxide were deposited by LPCVD of diacetoxyditertiarybutoxysilane (DADBS) at a temperature of 500C. The breakdown field of DADBS-oxide capacitors on n(+) or p-type silicon ranged between 9 to 11.5 MV/cm. The dielectric leakage measured at a 1MV/cm field was in the range 4x10(-13) to 5x10(-11)A. For the n(+) silicon, the value of the breakdown was inversely proportional to the oxide thickness, while the leakage current was directly proportional to thickness. Phosphorus doped oxide exhibited essentially the same dielectric properties as undoped material, except that the trapping phenomenon at fields close to breakdown appears to be more pronounced.